Si4450DY - TEMIC

Si4450DY N-Channel Enhancement-Mode MOSFET

Si4450DY N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) 60 rDS(on) (W) 0.024 @ VGS = 10 V 0.03 @ VGS = 6.0 V ID (A) "7.5 "6.5 D SO-8 S S S G 1 2 3 4 Top View S N-Channel MOSFET 8 7 6 5 D D D D G Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a.

Features

450DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductance b Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 7.5 A VGS = 6.0 V, ID = 6.5 A VDS = 15 V, ID = 7.5 A IS = 2.1 A, VGS = 0 V 20 0.020 0.025 18.5 0.75 1.2 0.024 0.03 2 "100 1 20 V nA mA A W S V Symbol Test Conditio.