SI4401DY - Vishay Siliconix

SI4401DY P-Channel MOSFET

P-Channel 40-V (D-S) MOSFET Si4401DY Vishay Siliconix PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) 0.0155 at VGS = - 10 V 0.0225 at VGS = - 4.5 V ID (A) - 10.5 - 8.7 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4401DY-T1-E3 (Lead (Pb)-free) Si4401.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4401DY-T1-E3 (Lead (Pb)-free) Si4401DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 10.5 - 8.3 - 8.7 - 5.9 Pulsed Drain Current IDM - 50 Continuous Source Current (Diode Conduction)a IS - 2.7 .