SI4403DY - Vishay Siliconix

SI4403DY P-Channel MOSFET

Si4403DY New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.017 @ VGS = –4.5 V –20 0.023 @ VGS = –2.5 V 0.032 @ VGS = –1.8 V FEATURES ID (A) –9 –7 –6 D TrenchFETr Power MOSFETS APPLICATIONS D Load Switch – Game Stations – Notebooks – Desktops S SO-8 S S S G 1 2 3 4 Top View D P-Channel MOSFET 8 7 6 5 D G D .

Features

ID (A)
  –9
  –7
  –6 D TrenchFETr Power MOSFETS APPLICATIONS D Load Switch
  – Game Stations
  – Notebooks
  – Desktops S SO-8 S S S G 1 2 3 4 Top View D P-Channel MOSFET 8 7 6 5 D G D D D ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID
  –7 IDM IS
  –2.1 2.5 1.6
  –55 to 150
  –30
  –1.3 1.35 0.87 W _C
  –5.0 A Sym.