SI4403BDY - Vishay

SI4403BDY P-Channel MOSFET

Si4403BDY New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.017 @ VGS = - 4.5 V - 20 0.023 @ VGS = - 2.5 V 0.032 @ VGS = - 1.8 V FEATURES ID (A) - 9.9 - 8.5 - 7.2 D TrenchFETr Power MOSFETS S SO-8 S S S G 1 2 3 4 Top View D Ordering Information: Si4403BDY Si4403BDY-T1 (with Tape and Reel) P-Channel MOSFET 8.

Features

ID (A) - 9.9 - 8.5 - 7.2 D TrenchFETr Power MOSFETS S SO-8 S S S G 1 2 3 4 Top View D Ordering Information: Si4403BDY Si4403BDY-T1 (with Tape and Reel) P-Channel MOSFET 8 7 6 5 D G D D D ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 7.9 IDM IS - 2.3 2.5 1.6 - 55 to 150 - 30 - 1.3 1.35 0.87 W.