New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES ID (A)d - 13.4 - 12 - 10.5 36.5 nC Qg (Typ.) PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.0155 at VGS = - 4.5 V 0.0195 at VGS = - 2.5 V 0.0250 at VGS = - 1.8 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Co.
ID (A)d - 13.4 - 12 - 10.5 36.5 nC Qg (Typ.)
PRODUCT SUMMARY
VDS (V) - 20 RDS(on) () 0.0155 at VGS = - 4.5 V 0.0195 at VGS = - 2.5 V 0.0250 at VGS = - 1.8 V
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4403CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 D D D D G
• Adaptor Switch
• High Current Load Switch
• Notebook
S
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Param.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI4403BDY |
Vishay |
P-Channel MOSFET | |
2 | SI4403DY |
Vishay Siliconix |
P-Channel MOSFET | |
3 | Si4401DDY |
Vishay |
P-Channel 40V (D-S) MOSFET | |
4 | SI4401DY |
Vishay Siliconix |
P-Channel MOSFET | |
5 | SI4404DY |
Vishay Siliconix |
N-Channel MOSFET | |
6 | SI4405DY |
Vishay Siliconix |
P-Channel MOSFET | |
7 | Si4407 |
Nanxin |
P-Channel Enhancement MOSFET | |
8 | SI4410BDY |
Vishay Siliconix |
N-Channel MOSFET | |
9 | SI4410DY |
NXP |
N-channel FET | |
10 | Si4410DY |
Fairchild Semiconductor |
Single N-Channel MOSFET | |
11 | Si4410DY |
Vishay |
N-Channel MOSFET | |
12 | Si4410DY |
International Rectifier |
Power MOSFET |