SI4456DY - Vishay

SI4456DY N-Channel 40-V (D-S) MOSFET

Si4456DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.0038 at VGS = 10 V 0.0045 at VGS = 4.5 V ID (A)a 33 31 Qg (Typ.) 37.5 nC FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Gen II Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Secondary Rectification • Point of Load SO-8 D S S S.

Features

• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Gen II Power MOSFET
• 100 % Rg and UIS Tested APPLICATIONS
• Secondary Rectification
• Point of Load SO-8 D S S S G 1 2 3 4 Top View S Ordering Information: Si4456DY-T1-E3 (Lead (Pb)-free) Si4456DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 40 ± .