P-Channel 12-V (D-S) MOSFET Si4451DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.00825 at VGS = - 4.5 V - 12 0.01025 at VGS = - 2.5 V 0.013 at VGS = - 1.8 V ID (A) - 14 - 13 - 12 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • Bat.
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• Battery Switch
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
Ordering Information: Si4451DY-T1-E3 (Lead (Pb)-free) Si4451DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 12
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 14 - 10 - 11 - 8
Pulsed Drain .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | Si4450DY |
TEMIC |
N-Channel Enhancement-Mode MOSFET | |
2 | SI4453DY |
Vishay Siliconix |
P-Channel MOSFET | |
3 | Si4455 |
Silicon Laboratories |
LOW-CURRENT OOK/(G)FSK SUB-GHZ TRANSCEIVER | |
4 | Si4455-C |
Silicon Laboratories |
LOW-CURRENT OOK/(G)FSK SUB-GHZ TRANSCEIVER / TRANSMITTER AND RECEIVER | |
5 | Si4455DY |
Vishay |
P-Channel 150-V (D-S) MOSFET | |
6 | SI4456DY |
Vishay |
N-Channel 40-V (D-S) MOSFET | |
7 | Si4459ADY |
Vishay |
P-Channel 30-V (D-S) MOSFET | |
8 | Si4401DDY |
Vishay |
P-Channel 40V (D-S) MOSFET | |
9 | SI4401DY |
Vishay Siliconix |
P-Channel MOSFET | |
10 | SI4403BDY |
Vishay |
P-Channel MOSFET | |
11 | SI4403CDY |
Vishay |
P-Channel MOSFET | |
12 | SI4403DY |
Vishay Siliconix |
P-Channel MOSFET |