This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driv.
Order code STU7NF25
VDSS 250 V
RDS(on) max. 0.42 Ω
• 100% avalanche tested
• 175 °C junction temperature
ID 8A
Applications
• Switching applications
Figure 1. Internal schematic diagram
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Description
This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STU7N105K5 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STU7N60M2 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STU7N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STU7N80K5 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STU7NA80 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STU7NA90 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STU7NB100 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STU7NB90 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STU7NB90I |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STU7NM60N |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STU7NM60N |
INCHANGE |
N-Channel MOSFET | |
12 | STU70R1K3S |
STMicroelectronics |
N-Channel MOSFET |