STU7NB90I - STMicroelectronics

STU7NB90I N-channel Power MOSFET

Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate cha.

Features

Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM Value STU7NB90 900 900 ±30 7.3 4.6 29.2 170 1.36 4
  –65 to 150 150 2500 7.3 (
*) 4.6 (
*) 29.2 (
*) 60 0.47 STU7NB90I Unit V V V A A A W W/°C V/ns V °C °C (
•)Pulse width limited by safe operating area .