STU7NA90 - STMicroelectronics

STU7NA90 N-channel Power MOSFET

® STU7NA90 N - CHANNEL 900V - 1.05 Ω - 7A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU7NA90 www.DataSheet4U.com s TYPICAL s V DSS 900 V R DS(on) < 1.3 Ω ID 7A s s s s s RDS(on) = 1.05 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED V.

Features

erature o o Value 900 900 ± 30 7 4.41 28 160 1.28 -65 to 150 150 Unit V V V A A A W W/ o C o o C C (
•) Pulse width limited by safe operating area June 1998 1/5 STU7NA90 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.78 30 0.1 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol I AR www.DataSheet4U.com Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanch.