STU7N80K5 - STMicroelectronics

STU7N80K5 N-channel Power MOSFET

These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STD7N80K5 STP7N80K5 STU7N80K5 DS9173 - Rev 7 -.

Features

Order code VDS STD7N80K5 STP7N80K5 800 V STU7N80K5
• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected RDS(on) max ID 1.2 Ω 6A Applications
• Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STD7N80K.