STU7N60M2 - STMicroelectronics

STU7N60M2 N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized swit.

Features

Order codes VDS @ TJmax RDS(on) max. STD7N60M2 STP7N60M2 650 V 0.95 Ω STU7N60M2
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected ID 5A Applications
• Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized swit.