Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charg.
MAXIMUM RATINGS
Symbol VDS V DGR V GS ID ID IDM (
• ) P tot dv/dt(1) T stg Tj March 1999 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o
Value 1000 1000 ± 30 7.3 4.7 29 160 1.28 4 -65 to 150 150
(1) ISD ≤7.3 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit V V V A A A W W/ o C V/ns
o o
C C 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STU7NB90 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STU7NB90I |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STU7N105K5 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STU7N60M2 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STU7N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STU7N80K5 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STU7NA80 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STU7NA90 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STU7NF25 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
10 | STU7NM60N |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STU7NM60N |
INCHANGE |
N-Channel MOSFET | |
12 | STU70R1K3S |
STMicroelectronics |
N-Channel MOSFET |