STU7N105K5 - STMicroelectronics

STU7N105K5 N-channel Power MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) Order code STP7N105K5 STU7N105K5 STW7N105K5 AM01476v1 Table 1:.

Features

Order code VDS RDS(on) max. ID PTOT STP7N105K5 STU7N105K5 1050 V 2 Ω 4 A 110 W STW7N105K5
 Industry’s lowest RDS(on) x area
 Industry’s best FoM (figure of merit)
 Ultra-low gate charge
 100% avalanche tested
 Zener-protected Applications
 Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) Order code STP7N.