STU3LN80K5 - STMicroelectronics

STU3LN80K5 N-channel Power MOSFET

These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) Order code STP3LN80K5 STU3LN80K5 AM01476v1 Table 1: Device s.

Features

Order code STP3LN80K5 STU3LN80K5 V DS 800 V RDS(on) max 3.25 Ω ID 2A
 Industry’s lowest RDS(on) x area
 Industry’s best FoM (figure of merit)
 Ultra-low gate charge
 100% avalanche tested
 Zener-protected Applications
 Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) Order code STP3LN80K5 STU3LN80K5 AM01.