STU303S - SamHop Microelectronics

STU303S P-Channel Enhancement Mode Field Effect Transistor

S TU/D303S S amHop Microelectronics C orp. N ov, 16, 2007 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m Ω ) Max ID -24A R DS (ON) S uper high dense cell design for low R DS (ON ). R ugged and reliable. S urface Mount P ackage. E S D P rocteced D 28 @ V G S = -10V 40 @ V G S = -4.5V D G S G .

Features

R ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS b Condition V GS = 0V, ID = -250uA V DS = -20V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID = -12A V GS =-4.5V, ID = - 6A V DS = -10V, V GS = -10V V DS = -10V, ID= -10A Min Typ C Max Unit -30 -1 10 -1 -1.8 23 34 -30 11.5 1130 -3 28 40 V uA uA V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esist.