STU3055NL - SamHop Microelectronics

STU3055NL N-Channel E nhancement Mode Field Effect Transistor

www.DataSheet4U.com S T U/D3055NL S amHop Microelectronics C orp. P reliminary May.28,2004 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 25V F E AT UR E S ( m W ) Max ID 21A R DS (ON) S uper high dense cell design for low R DS (ON ). 40@ V G S = 10V 50@ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage..

Features

/W S T U/D3055NL E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID =6.0A V GS =4.5V, ID = 5.2A V DS = 5V, V GS = 10V V DS = 10V, ID = 6.0A Min Typ C Max Unit 25 1 100 0.8 1.1 28 40 25 7.8 559 130 102 1.8 40 50 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Th.