STU3055L - SamHop Microelectronics

STU3055L N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

www.DataSheet4U.com S T U/D3055L S amHop Microelectronics C orp. MAR ,09 2005 ver1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 25V F E AT UR E S ( mW) ID 12A R DS (ON) Max S uper high dense cell design for low R DS (ON ). 70 @ V G S = 10V 95 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P .

Features

CAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 20V, V GS = 0V V GS = 16V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID =4A V GS =4.5V, ID = 3A V DS = 5V, V GS = 4.5V V DS = 10V, ID = 5.0A Min Typ C Max Unit 25 1 100 0.8 1.1 50 62 15 6 240 97 68 285 113 80 1.8 70 95 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S o.