STU3030NLS - SamHop Microelectronics

STU3030NLS N-Channel Logic Level E nhancement Mode Field Effect Transistor

www.DataSheet4U.com S amHop Microelectronics C orp. S T U/D3030NLS F E AT UR E S ( mW) Aug 08 , 2005 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V ID 30A R DS (ON) Max S uper high dense cell design for low R DS (ON ). 18 @ V G S = 10V 25 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ack.

Features

CAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S a Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 20A V GS =4.5V, ID= 12A V DS = 10V, V GS = 10V V DS = 10V, ID = 20A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.7 13 18 50 25 830 180 120 3 11 16 35 10 17 9 1.8 5 3 18 V m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS Gate Threshold Voltage V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg.