STU3030NL - SamHop Microelectronics

STU3030NL N-Channel Logic Level E nhancement Mode Field Effect Transistor

www.DataSheet4U.com S T U/D3030NL S amHop Microelectronics C orp. Apr 27 , 2005 ver1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S ( mW) ID 30A R DS (ON) Max S uper high dense cell design for low R DS (ON ). 18 @ V G S = 10V 36 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251.

Features

LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS b S ymbol Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS = 10V, ID =20A V GS = 4.5V, ID = 12A V DS = 10V, V GS = 10V V DS = 10V, ID = 20A Min Typ Max Unit 30 1 100 1 1.7 13 23 40 16 872 196 105 2.5 18 36 V uA nA V m ohm m ohm ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esi.