STU3LN62K3 - STMicroelectronics

STU3LN62K3 N-channel Power MOSFET

These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for t.

Features

Order codes VDSS RDS(on) max ID PD STD3LN62K3 STF3LN62K3 STP3LN62K3 STU3LN62K3 620 V <3Ω 2.5 A 2.5 A(1) 2.5 A 2.5 A 45 W 20 W 45 W 45 W 1. Limited by package
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Very low intrinsic capacitance
■ Improved diode reverse recovery characteristics
■ Zener-protected Application Switching applications Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting p.