STS2321 - SamHop Microelectronics

STS2321 P-Channel Enhancement Mode Field Effect Transistor

SamHop Microelectronics Corp. STS2321 Oct .29 2004 V1.1 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -20V FEATURES ( m W ) Max ID -3.2A RDS(ON) Super high dense cell design for low RDS(ON). 65 @ VGS = -4.5V 90 @ VGS =-2.5V Rugged and reliable. SOT-23 package. D SOT-23 D S G G S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless o.

Features

( m W ) Max ID -3.2A RDS(ON) Super high dense cell design for low RDS(ON). 65 @ VGS = -4.5V 90 @ VGS =-2.5V Rugged and reliable. SOT-23 package. D SOT-23 D S G G S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TJ=25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit -20 10 -3.2 -11 -1.25 1.25 -55 to 150 Unit V V A A A W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-A.