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STS2321 |
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| Part Number | STS2321 |
| Manufacturer | SamHop Microelectronics |
| Description | SamHop Microelectronics Corp. STS2321 Oct .29 2004 V1.1 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -20V FEATURES ( m W ) Max ID -3.2A RDS(ON) Super high dense cell d... |
| Features |
( m W ) Max
ID
-3.2A
RDS(ON)
Super high dense cell design for low RDS(ON).
65 @ VGS = -4.5V 90 @ VGS =-2.5V
Rugged and reliable. SOT-23 package.
D
SOT-23
D S G
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TJ=25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit -20 10 -3.2 -11 -1.25 1.25 -55 to 150 Unit V V A A A W C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-A... |
| Document |
 STS2321 Data Sheet
PDF 555.13KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STS2320 |
ETC |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 2 | STS2300 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 3 | STS2300S |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 4 | STS2301 |
SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 5 | STS2301A |
SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor |
|