STS2306E - SamHop Microelectronics

STS2306E N-Channel MOSFET

Green Product S T S 2306E J an. 10 2008 V er1.0 S amHop Microelectronics C orp. N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m Ω ) Max ID 6.5A R DS (ON) S uper high dense cell design for low R DS (ON ). 30 @ V G S = 4.5V 40 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. E S D P .

Features

n-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 10V ,VDS = 0V V DS = V GS , ID = 250uA Min Typ C Max Unit 20 1 10 0.5 0.9 24 32 16 540 160 100 1.5 30 40 V uA uA V m ohm m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance Forward Transconductance V GS = 4.5V, ID = 6 A V GS = 2.5V, ID = 3 A V DS = 7V, ID = 5A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R ev.