STS2305 - SamHop Microelectronics

STS2305 P-Channel Enhancement Mode Field Effect Transistor

Green Product STS2305 Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 57 @ VGS=-4.5V 78 @ VGS=-4.0V -20V -3.4A 83 @ VGS=-3.7V 93 @ VGS=-3.1V 115 @ VGS=-2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D S OT -23.

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D S OT -23 D S G S G ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit -20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C -3.4 -2.7 -13 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change w.