STS2301 - SamHop Microelectronics

STS2301 P-Channel Enhancement Mode Field Effect Transistor

S amHop Microelectronics C orp. S T S 2301 J UL.30 2004 ver1.1 P -C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) Max ID -3.4A R DS (ON) S uper high dense cell design for low R DS (ON ). 60 @ V G S = -4.5V 80 @ V G S = -2.5V 105 @ V G S = -1.8V R ugged and reliable. S OT-23 package. D S OT.

Features

eakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 10V, V DS = 0V V DS = V GS , ID =-250uA V GS = -4.5V, ID = -4.0A V GS = -2.5V, ID = -2.0A V GS =-1.8V, ID = -1.0A On-S tate Drain Current Forward Transconductance ID(ON) g FS c S ymbol Condition Min Typ C Max Unit -20 1 100 -0.6 -0.85 -1.5 50 70 95 -20 5 926 183 141 60 80 105 V uA nA V m-ohm m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance V DS = -5V, V GS = -4.5V V DS = -5V, ID = -5A .