STS2306 - SamHop Microelectronics

STS2306 N-Channel Enhancement Mode Field Effect Transistor

S amHop Microelectronics C orp. S T S 2306 Apr,21 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m £[ ) Max ID 2.8A R DS (ON) S uper high dense cell design for low R DS (ON ). 45 @ V G S = 4.5V 60 @ V G S =2.5V R ugged and reliable. S OT-23 package. D S OT-23 D S G G S ABS OLUTE M.

Features

Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 8V,V DS = 0V V DS = V GS , ID = 250uA V GS = 4.5V, ID = 2.8A V GS = 2.5V, ID = 2.0A V DS = 7V, ID = 5A Min Typ C Max Unit 20 1 V uA 100 nA 0.5 0.8 33 52 5 608 114 86 1.5 45 60 V m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance Forward Transconductance S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =10V, V GS = 0V f =1.0.