STP80N10F7 - STMicroelectronics

STP80N10F7 N-Channel Power MOSFET

th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. '3$.72DQG 72)3QR7$% +3$. $0Y Order codes STD80N10F7 STF80N10F7 STH80N10F7-2 STP80N10F7 Table 1. Device summary Marking Package 8.

Features

Order codes VDS @ RDS(on) TJmax max STD80N10F7 0.01 Ω STF80N10F7 0.01 Ω 100 V STH80N10F7-2 0.0095 Ω STP80N10F7 0.01 Ω ID 70 A 40 A 80 A PTOT 85 W 30 W 110 W
• Extremely low gate charge
• Ultra low on-resistance
• Low gate input resistance Figure 1. Internal schematic diagram '7$% '7$%
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* 6 Applications
• Switching applications Description th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. '3$.72D.