STP80N10F7 |
Part Number | STP80N10F7 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. ... |
Features |
Order codes
VDS @ RDS(on) TJmax max
STD80N10F7
0.01 Ω
STF80N10F7
0.01 Ω
100 V
STH80N10F7-2
0.0095 Ω
STP80N10F7
0.01 Ω
ID 70 A 40 A
80 A
PTOT 85 W 30 W
110 W
• Extremely low gate charge • Ultra low on-resistance • Low gate input resistance Figure 1. Internal schematic diagram '7$% '7$% * 6 * 6 Applications • Switching applications Description th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. '3$.72D... |
Document |
STP80N10F7 Data Sheet
PDF 695.79KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STP80N10F7 |
INCHANGE |
N-Channel MOSFET | |
2 | STP80N1K1K6 |
STMicroelectronics |
N-Channel Power MOSFET | |
3 | STP80N03L-06 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | |
4 | STP80N05-09 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | |
5 | STP80N06-10 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR |