S(3) AM01476v1_tab This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. Product status link ST.
TAB
Order code
VDS
RDS(on) max.
ID
STP80N600K6
800 V
600 mΩ
7A
TO-220
1 23
D(2, TAB)
• Worldwide best RDS(on) x area
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Applications
• Flyback converter
G(1)
• Adapters for tablets, notebook and AIO
• LED lighting
Description
S(3)
AM01476v1_tab This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP80N6F6 |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
2 | STP80N03L-06 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | |
3 | STP80N05-09 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | |
4 | STP80N06-10 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | |
5 | STP80N10F7 |
STMicroelectronics |
N-Channel Power MOSFET | |
6 | STP80N10F7 |
INCHANGE |
N-Channel MOSFET | |
7 | STP80N1K1K6 |
STMicroelectronics |
N-Channel Power MOSFET | |
8 | STP80N20M5 |
ST Microelectronics |
Power MOSFET | |
9 | STP80N240K6 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STP80N340K6 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STP80N450K6 |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STP80N70F4 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |