STP80N05-09 - ST Microelectronics

STP80N05-09 N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

STP80N05-09 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE STP80N05-09 s s s s s s VDS S 50 V RDS(o n) < 0.009 Ω ID 80 A ULTRA HIGH DENSITY TECHNOLOGY TYPICAL RDS(on) = 7 mΩ AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY o 175 C OPERATING TEMPERATURE 1 2 3 APPLICATIONS s SYNCROUNOUS RECTIFIERS s HIGH CU.

Features

DD ≤ V(BR)DSS, TJ ≤ TJMAX Unit V V V A A A W W/ oC V/ns o o C C (
•) Pulse width limited by safe operating area March 1997 1/9 STP80N05-09 THERMAL DATA Rt hj-case R th j-amb R thc-sin k Tl Thermal Resist ance Junc tion-case Max Thermal Resist ance Junc tion-ambi ent Max Thermal Resist ance Case -sink Typ Max imum Lead Temperature For Sol dering Purpose 1 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limit ed by Tj max , δ < 1%) Sin gle Pul se Aval anc he Energy o (starting Tj = 25 C, .