This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology. The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance. 3 2 1 TO-220 Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order code STP80N70F4 Mar.
Order code STP80N70F4
VDSS 68 V
RDS(on) max < 9.8 mΩ
ID 85 A
■ N-channel enhancement mode
■ 100% avalanched rated
■ Low gate charge
■ Very low on-resistance
Application
Switching applications
Description
This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology. The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance.
3 2 1
TO-220
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary Order code STP80N70F4
Marking 80N70F4
Package TO-220
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP80N70F6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
2 | STP80N03L-06 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | |
3 | STP80N05-09 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | |
4 | STP80N06-10 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | |
5 | STP80N10F7 |
STMicroelectronics |
N-Channel Power MOSFET | |
6 | STP80N10F7 |
INCHANGE |
N-Channel MOSFET | |
7 | STP80N1K1K6 |
STMicroelectronics |
N-Channel Power MOSFET | |
8 | STP80N20M5 |
ST Microelectronics |
Power MOSFET | |
9 | STP80N240K6 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STP80N340K6 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STP80N450K6 |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STP80N600K6 |
STMicroelectronics |
N-Channel Power MOSFET |