The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications.
Type STB80N20M5 STP80N20M5
■
■
■
■
■
VDSS @ TJmax 200 V
RDS(on) max < 0.023 Ω
ID 61 A 61 A
3 1
1 2 3
Amongst the best RDS(on)
* area High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested
D2PAK
TO-220
Application
Switching applications Figure 1. Internal schematic diagram
Description
The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is un.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP80N240K6 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STP80N03L-06 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | |
3 | STP80N05-09 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | |
4 | STP80N06-10 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | |
5 | STP80N10F7 |
STMicroelectronics |
N-Channel Power MOSFET | |
6 | STP80N10F7 |
INCHANGE |
N-Channel MOSFET | |
7 | STP80N1K1K6 |
STMicroelectronics |
N-Channel Power MOSFET | |
8 | STP80N340K6 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STP80N450K6 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STP80N600K6 |
STMicroelectronics |
N-Channel Power MOSFET | |
11 | STP80N6F6 |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
12 | STP80N70F4 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |