STP80N450K6 - STMicroelectronics

STP80N450K6 N-channel Power MOSFET

S(3) AM01476v1_tab This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. Product status link ST.

Features

Order code VDS RDS(on) max. ID STP80N450K6 800 V 450 mΩ 10 A
• Worldwide best RDS(on) x area
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected Applications
• Flyback converter
• Adapters for tablets, notebook and AIO
• LED Lighting Description S(3) AM01476v1_tab This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiri.