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STP80N05-09 |
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| Part Number | STP80N05-09 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | STP80N05-09 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE STP80N05-09 s s s s s s VDS S 50 V RDS(o n) < 0.009 Ω ID 80 A ULTRA HIGH DENSITY TECHNOLOGY TYPICAL RDS(on) ... |
| Features |
DD ≤ V(BR)DSS, TJ ≤ TJMAX
Unit V V V A A A W W/ oC V/ns
o o
C C
( •) Pulse width limited by safe operating area March 1997 1/9 STP80N05-09 THERMAL DATA Rt hj-case R th j-amb R thc-sin k Tl Thermal Resist ance Junc tion-case Max Thermal Resist ance Junc tion-ambi ent Max Thermal Resist ance Case -sink Typ Max imum Lead Temperature For Sol dering Purpose 1 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limit ed by Tj max , δ < 1%) Sin gle Pul se Aval anc he Energy o (starting Tj = 25 C, ... |
| Document |
 STP80N05-09 Data Sheet
PDF 114.77KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STP80N03L-06 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR |
|
| 2 | STP80N06-10 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR |
|
| 3 | STP80N10F7 |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 4 | STP80N10F7 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | STP80N1K1K6 |
STMicroelectronics |
N-Channel Power MOSFET |
|