Green Product STB/P80L60 Ver2.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 80A R DS(ON) (m Ω) Typ 9.5 @ VGS=10V 13.5 @ VGS=4.5V D D G D S.
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 80A R DS(ON) (m Ω) Typ 9.5 @ VGS=10V 13.5 @ VGS=4.5V D D G D S G S G S TP S E R IE S TO-220 S TB S E R IE S TO-263(DD-P AK) S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 60 ±20 TC=25°C TC=70°C 80 68 250 420 TC=25°C TC=70°C 130 91 -55 to 175 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Pow.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP80N03L-06 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | |
2 | STP80N05-09 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | |
3 | STP80N06-10 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | |
4 | STP80N10F7 |
STMicroelectronics |
N-Channel Power MOSFET | |
5 | STP80N10F7 |
INCHANGE |
N-Channel MOSFET | |
6 | STP80N1K1K6 |
STMicroelectronics |
N-Channel Power MOSFET | |
7 | STP80N20M5 |
ST Microelectronics |
Power MOSFET | |
8 | STP80N240K6 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STP80N340K6 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STP80N450K6 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STP80N600K6 |
STMicroelectronics |
N-Channel Power MOSFET | |
12 | STP80N6F6 |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET |