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STP80L60 |
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| Part Number | STP80L60 |
| Manufacturer | SamHop |
| Description | Green Product STB/P80L60 Ver2.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V FEATURES Super high dense cell design for ... |
| Features |
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
ID
80A
R DS(ON) (m Ω) Typ
9.5 @ VGS=10V 13.5 @ VGS=4.5V
D
D
G D S
G
S
G
S TP S E R IE S TO-220
S TB S E R IE S TO-263(DD-P AK)
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
Limit 60 ±20 TC=25°C TC=70°C 80 68 250 420 TC=25°C TC=70°C 130 91 -55 to 175
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Pow... |
| Document |
 STP80L60 Data Sheet
PDF 278.25KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP80N03L-06 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR |
|
| 2 | STP80N05-09 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR |
|
| 3 | STP80N06-10 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR |
|
| 4 | STP80N10F7 |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 5 | STP80N10F7 |
INCHANGE |
N-Channel MOSFET |
|