STP656F - SamHop

STP656F N-Channel Enhancement Mode Field Effect Transistor

Gr Pr STP656F Ver 1.0 SamHop Microelectronics Corp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220F Package. ID 22A R DS(ON) (m ) Max 19 @ VGS=10V 29 @ VGS=4.5V D G D S G STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unles.

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220F Package. ID 22A R DS(ON) (m ) Max 19 @ VGS=10V 29 @ VGS=4.5V D G D S G STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy d Maximum Power Dissipation a b a Limit 60 ±20 T C =25 °C T C =70 °C 22 17.7 66 182 TC=25°C TC=70°C 21 13.3 -55 to 150 Units V V A A A mJ W W °C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R.