STP65N150M9 - STMicroelectronics

STP65N150M9 N-CHANNEL Power MOSFET

S(3) AM01476v1_tab This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lowe.

Features

Order code VDS RDS(on) max. ID STP65N150M9 650 V 150 mΩ 20 A
• Worldwide best FOM RDS(on)
*Qg among silicon-based devices
• Higher VDSS rating
• Higher dv/dt capability
• Excellent switching performance
• Easy to drive
• 100% avalanche tested
• Zener-protected G(1) Applications
• High efficiency switching applications Description S(3) AM01476v1_tab This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain ma.