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S(3) AM01475v1_noZen This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the.
TAB
TO-220
1 23
D(2, TAB)
Order code
VDS
RDS(on) max.
ID
STP65N045M9
650 V
45 mΩ
54A
•
Worldwide best FOM RDS(on)
*Qg among silicon-based devices
•
Higher VDSS rating
• Higher dv/dt capability
• Excellent switching performance
• Easy to drive
• 100% avalanche tested
Applications
G(1)
• High efficiency switching applications
Description
S(3)
AM01475v1_noZen
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits.
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