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STP601/STP601D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP401 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low .
l Enhancement Mode MOSFET -30A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted) Parameter Drain-Source Voltage Symbo l VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=100℃ VGSS ID IDM Continuous Source Current (Diode Conduction) IS Power Dissipation TA=25℃ PD Operation Junction Temperature TJ Storage Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical -60 ±20 -30.0 -22.0 -110 -30 60 150 -55/150 25 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansont.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP601D |
Stanson Technology |
MOSFET |
|
| 2 | STP605D |
STANSON |
P-Channel Enhancement Mode MOSFET |
|
| 3 | STP607D |
Stanson Technology |
MOSFET |
|
| 4 | STP60L60 |
SamHop |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 5 | STP60L60A |
SamHop |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 6 | STP60L60F |
SamHop |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 7 | STP60N043DM9 |
STMicroelectronics |
N-CHANNEL Power MOSFET |
|
| 8 | STP60N05-14 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 9 | STP60N05-16 |
ST Microelectronics |
(STP60N05-16 / STP60N06-16) N-CHANNEL Power MOSFET |
|
| 10 | STP60N06 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 11 | STP60N06-14 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 12 | STP60N06-14 |
INCHANGE |
N-Channel MOSFET |
|