STP6506 - Stanson Technology

STP6506 MOSFET

The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage application, such as notebook co.

Features

om STP6506 2010. V1 STP6506 Dual P Channel Enhancement Mode MOSFET -2.8A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ ID IDM Continuous Source Current (Diode Conduction) IS Power Dissipation Operation Junction Temperature TA=25℃ TA=70℃ PD TJ Storage Temperature Range TSTG Thermal Resistance-Junction to Ambient T≦10sec Steady State RθJA Typical Unit -30 V ±20 V -2.8 -2.1 -8 A A -1.4 A 1.15 0.75 -55/150 W ℃ -55/1.