STP60L60 - SamHop

STP60L60 N-Channel Logic Level Enhancement Mode Field Effect Transistor

STB/P60L60 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 36A R DS(ON) (m Ω) Max 27 @ VGS=10V 42 @ VGS=4.5V D D G S G D S G S TP S.

Features

Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 36A R DS(ON) (m Ω) Max 27 @ VGS=10V 42 @ VGS=4.5V D D G S G D S G S TP S E R IE S TO-220 S TB S E R IE S TO-263(DD-P AK) S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy c Maximum Power Dissipation a b a Limit 60 ±20 T C =25 °C T C =70 °C 36 29 106 113 TC=25°C TC=70°C 70 45 -55 to 150 Units V V A A A mJ W.