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STP656F |
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| Part Number | STP656F |
| Manufacturer | SamHop |
| Description | Gr Pr STP656F Ver 1.0 SamHop Microelectronics Corp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V FEATURES Super high dense cell design for low R DS(ON). Rugged and ... |
| Features |
Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220F Package.
ID
22A
R DS(ON) (m ) Max
19 @ VGS=10V 29 @ VGS=4.5V
D
G D S
G
STF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy d Maximum Power Dissipation
a b a
Limit 60 ±20 T C =25 °C T C =70 °C 22 17.7 66 182 TC=25°C TC=70°C 21 13.3 -55 to 150
Units V V A A A mJ W W °C
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R... |
| Document |
 STP656F Data Sheet
PDF 117.84KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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