STP60N55F3 - ST Microelectronics

STP60N55F3 N-CHANNEL Power MOSFET

This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique “Single Feature Size™“ strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low onresistance, rugged avalanche characterist.

Features

Type STB60N55F3 STD60N55F3 STF60N55F3 STP60N55F3 STU60N55F3
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■ VDSS 55V 55V 55V 55V 55V RDS(on) <10.5mΩ <10.5mΩ <10.5mΩ <10.5mΩ <10.5mΩ ID 65A 65A 30A 65A 65A Pw 110W 1 3 2 3 2 1 110W 30W 110W 110W TO-220FP 3 1 IPAK DPAK 3 1 3 Standard threshold drive 100% avalanche tested D²PAK 1 2 TO-220 Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique “Single Feature Size™“ strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with ext.