STP60N3LH5 - STMicroelectronics

STP60N3LH5 N-channel Power MOSFET

This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. 3 2 1 TO-220 3 1 DPAK 3 2 1 IPAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes STD60N3LH5 STP60N3LH5 STU60N3LH5 Marking 60N3LH5 60N3.

Features

Type STD60N3LH5 STP60N3LH5 STU60N3LH5 VDSS 30 V 30 V 30 V RDS(on) max 0.008 Ω 0.0084 Ω 0.0084 Ω ID 48 A 48 A 48 A
■ RDS(on)
* Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses Application
■ Switching applications Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. 3 2 1 TO-220 3 1 DPAK 3 2 1 IPAK Figure 1. Internal schematic diagra.