This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC.
tage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junct ion T emperature
o o o
Unit
ST P20NE06F P 60 60 ± 20 V V V 13 9 80 30 0.2 2000 7 A A A W W /o C V V/ns
o o
20 14 80 70 0.47 -65 to 175 175
C C 1/9
(
•) Pulse width limited by safe operating area
( 1) ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
STP20NE06L/FP
THERMAL DATA
TO.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP20NE06L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
2 | STP20NE06 |
ST |
N-CHANNEL 60V - 0.06 OHM - 20A TO-220/TO-220FP STRIPFET POWER MOSFET | |
3 | STP20NE10 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
4 | STP20N06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
5 | STP20N06FI |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
6 | STP20N10 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
7 | STP20N10L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
8 | STP20N10L |
INCHANGE |
N-Channel MOSFET | |
9 | STP20N10LFI |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
10 | STP20N20 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
11 | STP20N60M2-EP |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
12 | STP20N65M5 |
STMicroelectronics |
N-channel Power MOSFET |