STP20N10 - ST Microelectronics

STP20N10 N-CHANNEL POWER MOSFET

STP20N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP20N10 s s s s s s s s V DSS 100 V R DS( on) < 0.12 Ω ID 20 A TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 TO-2.

Features

re o o Value 100 100 ± 20 20 14 80 105 0.7 -65 to 175 175 Unit V V V A A A W W/o C o o C C (
•) Pulse width limited by safe operating area December 1996 1/9 STP20N10 THERMAL DATA R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1.43 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy.