STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP20N10L STP20N10LFI s s s s s s s s s V DSS 100 V 100 V R DS( on) < 0.12 Ω < 0.12 Ω ID 20 A 12 A TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING .
oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
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Value STP20N10LFI 100 100 ± 15 20 14 80 105 0.7 -65 to 175 175 12 8 80 40 0.27 2000
Unit
V V V A A A W W/o C V
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C C
(
•) Pulse width limited by safe operating area
November 1996
1/10
STP20N10L/FI
THERMAL DATA
TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.43 62.5 0.5 300 ISOWATT220 3.75
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C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ.
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Easy to use ·100% avalanche test.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP20N10 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
2 | STP20N10LFI |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
3 | STP20N06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
4 | STP20N06FI |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
5 | STP20N20 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
6 | STP20N60M2-EP |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
7 | STP20N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STP20N65M5 |
INCHANGE |
N-Channel MOSFET | |
9 | STP20N90K5 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STP20N95K5 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STP20NE06 |
ST |
N-CHANNEL 60V - 0.06 OHM - 20A TO-220/TO-220FP STRIPFET POWER MOSFET | |
12 | STP20NE06L |
ST Microelectronics |
N-CHANNEL POWER MOSFET |