STP20N65M5 - STMicroelectronics

STP20N65M5 N-channel Power MOSFET

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applicati.

Features

Order codes STB20N65M5 STI20N65M5 STP20N65M5 STW20N65M5 VDS @ TJmax RDS(on) max ID 710 V 0.19 Ω 18 A
■ Worldwide best RDS(on)
* area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested Applications
■ Switching applications TAB 2 1 D2PAK 3 TAB TAB 123 I2PAK 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram $4!" Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizon.